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Ultralow Defect Density at Sub-0.5 nm HfO2/SiGe Interfaces via Selective Oxygen Scavenging
- Source :
- ACS Applied Materials & Interfaces. 10:30794-30802
- Publication Year :
- 2018
- Publisher :
- American Chemical Society (ACS), 2018.
-
Abstract
- The superior carrier mobility of SiGe alloys make them a highly desirable channel material in complementary metal-oxide-semiconductor (CMOS) transistors. Passivation of the SiGe surface and the associated minimization of interface defects between SiGe channels and high-k dielectrics continues to be a challenge for fabrication of high-performance SiGe CMOS. A primary source of interface defects is interfacial GeOx. This interfacial oxide can be decomposed using an oxygen-scavenging reactive gate metal, which nearly eliminates the interfacial oxides, thereby decreasing the amount of GeOx at the interface; the remaining ultrathin interlayer is consistent with a SiOx-rich interface. Density functional theory simulations demonstrate that a sub-0.5 nm thick SiOx-rich surface layer can produce an electrically passivated HfO2/SiGe interface. To form this SiOx-rich interlayer, metal gate stack designs including Al/HfO2/SiGe and Pd/Ti/TiN/nanolaminate (NL)/SiGe (NL: HfO2–Al2O3) were investigated. As compared to the...
- Subjects :
- 010302 applied physics
Electron mobility
Materials science
Fabrication
Passivation
business.industry
chemistry.chemical_element
02 engineering and technology
021001 nanoscience & nanotechnology
01 natural sciences
Atomic layer deposition
chemistry
0103 physical sciences
Optoelectronics
General Materials Science
Surface layer
0210 nano-technology
Tin
business
Metal gate
High-κ dielectric
Subjects
Details
- ISSN :
- 19448252 and 19448244
- Volume :
- 10
- Database :
- OpenAIRE
- Journal :
- ACS Applied Materials & Interfaces
- Accession number :
- edsair.doi...........70a54ef1261fc8793bb5aceff03d09f7