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Both NOR and NAND Embedded Hybrid Flash for S-SIM Application Using 90 nm Process Technology

Authors :
Hyucksoo Yang
Seung-Won Lee
Ji-Do Ryu
Young-Ho Kim
Hoonjin Bang
Yong-Kyu Lee
Chilhee Chung
E. S. Jung
Jeong-Uk Han
Chang Min Jeon
Hyun-Khe Yoo
Jae-Min Yu
Byeong-Hoon Lee
Eunmi Hong
Seung-Jin Yang
Daesop Lee
Source :
2009 IEEE International Memory Workshop.
Publication Year :
2009
Publisher :
IEEE, 2009.

Abstract

We have firstly demonstrated a hybrid flash including both NOR and NAND cell in a single chip using 90 nm logic technology for S-SIM (Super-Subscriber Identity Module) application. The memory sizes are 16 MB NAND and 768 kB NOR flash, respectively. The flash memory cells exhibited over 10 k-cycle endurance and 10-year retention for the successful smart card application.

Details

Database :
OpenAIRE
Journal :
2009 IEEE International Memory Workshop
Accession number :
edsair.doi...........706fcc334fd9724cde76ffcfd2dd0e72
Full Text :
https://doi.org/10.1109/imw.2009.5090582