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Design of high performance CMOS linear readout integrated circuit

Authors :
Liu Jing Liu Jing
Chen Zhongjian
Tang Ju
Ji Lijiu
Cui Wentao
Lu Wengao
Gao Jun
Source :
2003 5th International Conference on ASIC Proceedings (IEEE Cat No 03TH8690) ICASIC-03.
Publication Year :
2003
Publisher :
IEEE, 2003.

Abstract

This paper details a high performance CMOS linear readout integrated circuit (ROIC) and the measured result. This ROIC realizes time-delay integration (TDI) to enhance the signal to noise ratio (S/N), and defective element deselection (DED) to decrease the probability of bad columns. The Other features include adjustable integration time, multi gain, bi-direction of TDI scan. super-sample, and electrical test. It is fabricated using 1.2-mm double poly double metal (DPDM) CMOS technology. The total power consumption is about 24 mW at 5 V supply voltage.

Details

Database :
OpenAIRE
Journal :
2003 5th International Conference on ASIC Proceedings (IEEE Cat No 03TH8690) ICASIC-03
Accession number :
edsair.doi...........70595cbb48cbb06cbaf60773717ca949
Full Text :
https://doi.org/10.1109/icasic.2003.1277622