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Current-Sweep Operation on Nonlinear Selectorless RRAM for Multilevel Cell Applications
- Source :
- Journal of Electronic Materials. 49:3499-3503
- Publication Year :
- 2020
- Publisher :
- Springer Science and Business Media LLC, 2020.
-
Abstract
- Bilayer selectorless resistive random-access memories (RRAM) have been demonstrated by utilizing the intrinsic nonlinear resistive switching (RS) characteristics, without additional transistor or a selector integration. The bilayer structures, i.e. high-k layer/low-k layer stacks, are highly scalable while suppressing the sneak path currents (SPC) and reading error in the crossbar RRAM array. The nonlinearity (NL) modulation is also investigated by different operating schemes, and a multilevel cell application is demonstrated with the current-sweep method. The results provide additional insights into the development and optimization of bilayer selectorless RRAMs with high nonlinearity, good memory window, and low switching energy (∼ 40 pJ/bit), which enable the high-density storage and low-power crossbar array memory applications.
- Subjects :
- 010302 applied physics
Resistive touchscreen
Materials science
business.industry
Reading (computer)
Bilayer
Transistor
02 engineering and technology
021001 nanoscience & nanotechnology
Condensed Matter Physics
01 natural sciences
Electronic, Optical and Magnetic Materials
Resistive random-access memory
law.invention
Nonlinear system
law
Modulation
0103 physical sciences
Materials Chemistry
Optoelectronics
Electrical and Electronic Engineering
Crossbar switch
0210 nano-technology
business
Subjects
Details
- ISSN :
- 1543186X and 03615235
- Volume :
- 49
- Database :
- OpenAIRE
- Journal :
- Journal of Electronic Materials
- Accession number :
- edsair.doi...........700cb3cad459896c3398dd6a80086447