Fabrication technology of a-Si/a-SiGe/a-SiGe triple-junction plastic film substrate solar cells

Authors :: T. Yoshida
K. Harashima
Shinji Fujikake
H. Sato
Y. Ichikawa
Masayuki Tanda
T. Sasaki
Akihiro Takano
K. Tabuchi
Source :: Conference Record of the Twenty-Eighth IEEE Photovoltaic Specialists Conference - 2000 (Cat. No.00CH37036).
Publication Year :: 2002
Publisher :: IEEE, 2002.
Abstract: Device design and deposition conditions of a-Si/a-SiGe/a-SiGe triple-junction solar cells were studied. To optimize their device structure, we applied several technologies such as a-SiO:H window p-layer for top cell, low temperature deposited /spl mu/c-Si p-layer for middle/bottom cells and hydrogen-dilution technique for a-SiGe:H i-layers. As a result, we obtained 1 cm/sup 2/ cell with 11% stabilized efficiency. We found out effective deposition parameters such as increasing both hydrogen-dilution ratio and RF-power for Ge/Si>0.5. In addition, we presented newly designed apparatus for the triple-junction 40 cm/spl times/80 cm solar cells.

Subjects :: Amorphous silicon
Fabrication
Materials science
Silicon
business.industry
Triple junction
RF power amplifier
Plastic film
chemistry.chemical_element
Substrate (electronics)
chemistry.chemical_compound
chemistry
Optoelectronics
business
Deposition (law)

Database :: OpenAIRE
Journal :: Conference Record of the Twenty-Eighth IEEE Photovoltaic Specialists Conference - 2000 (Cat. No.00CH37036)
Accession number :: edsair.doi...........6fe79e0885c6132a23cc3ecf0cb9c8e7
Full Text :: https://doi.org/10.1109/pvsc.2000.915995

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