Comparison of memory switching operation in a number of amorphous chalcogenide systems

A number of chalcogenide glasses were investigated for thin film switching applications. Two ranges of threshold voltage were of interest, 15 and 30 V. The switching performance of thin film devices was evaluated and rated on a simple numerical scale. The memory glasses based on the Ge-Te eutectic gave generally satisfactory performance. Selenium-based glasses exhibited high threshold voltage in thin film form, but had limited lifetime. Threshold voltages of about 30 V were obtained from Bi-As-Se glasses; these proved difficult to lock “ON” and possible reasons for this are discussed.