Electrically tunable localized tunneling channels in silicene nanoribbons

The topological phase of a silicene nanoribbon holding edge states in the bulk energy gap can be easily broken by an external electric field. Here, we show through low-energy Green's function calculations that it is possible to localize conducting channels anywhere in a silicene nanoribbon by applying an inhomogeneous electric field. The spin degeneracy of these channels can also be broken in the same manner, allowing conduction of spin as well as charge. On this basis, we suggest design of a ternary logic device, which could be used in low-power circuits. Our study demonstrates that silicene and related group IV elements with honeycomb structure could provide a platform for efficient manipulation of spin currents via external electric fields, without the need to switch magnetic fields for spintronics applications.