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Photoelectrochemical Properties of the p−n Junction in and near the Surface Depletion Region of n-Type GaN

Authors :
Keiichi Sato
Kazuhiro Ohkawa
Katsushi Fujii
Takafumi Yao
Yasuhiro Iwaki
Masato Ono
Source :
The Journal of Physical Chemistry C. 114:22727-22735
Publication Year :
2010
Publisher :
American Chemical Society (ACS), 2010.

Abstract

Photoelectrochemical water splitting is expecting a new energy source to produce hydrogen from water. The photoilluminated electrode using a uniform semiconductor single crystal has been well analyzed, but the effect of that using a structural semiconductor is still obscure. The properties of one of the structural semiconductors with a p−n junction in and near a depletion region were investigated using the samples with thin p-type layers on n-type GaN in this article. The properties were also evaluated by the calculation based on the Poisson equation. Not only the band-edge energy of a semiconductor at the semiconductor−electrolyte interface but also the length of the depletion region and the band-edge energy profile affected the photocurrent density from the evaluation. The effect of the energy profile of the depletion region is also discussed.

Details

ISSN :
19327455 and 19327447
Volume :
114
Database :
OpenAIRE
Journal :
The Journal of Physical Chemistry C
Accession number :
edsair.doi...........6f18bbcba19e76b0cdd2279558ea1205
Full Text :
https://doi.org/10.1021/jp104403s