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Dislocation behavior of surface-oxygen-concentration controlled Si wafers

Dislocation behavior of surface-oxygen-concentration controlled Si wafers

Authors :
Haruo Sudo
Koji Izunome
Shotaro Takeuchi
Araki Koji
Akira Sakai
Yoshiaki Nakamura
Hirotada Asazu
Hiroya Sannai
Source :
Thin Solid Films. 557:106-109
Publication Year :
2014
Publisher :
Elsevier BV, 2014.

Abstract

We have investigated dislocation behavior in the surface area of surface-oxygen-concentration controlled Si wafers treated by a high temperature rapid thermal oxidation (HT-RTO). The HT-RTO process allows us to precisely control the interstitial oxygen concentration ([O i ]) in the surface area of the Si wafers. Sizes of rosette patterns, generated by nano-indentation and subsequent thermal annealing at 900 °C for 1 h, were measured for the Si wafers with various [O i ]. It was found that the rosette size decreases in proportion to the − 0.25 power of [O i ] in the surface area of the Si wafers, which were higher than [O i ] of 1 × 10 17 atoms/cm 3 . On the other hand, [O i ] of lower than 1 × 10 17 atoms/cm 3 did not affect the rosette size very much. These experimental results demonstrate the ability of the HT-RTO process to suppress the dislocation movements in the surface area of the Si wafer.

Details

ISSN :
00406090
Volume :
557
Database :
OpenAIRE
Journal :
Thin Solid Films
Accession number :
edsair.doi...........6ef4845cda597341b5490af75bd842da
Full Text :
https://doi.org/10.1016/j.tsf.2013.10.081