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Dislocation behavior of surface-oxygen-concentration controlled Si wafers
Dislocation behavior of surface-oxygen-concentration controlled Si wafers
- Source :
- Thin Solid Films. 557:106-109
- Publication Year :
- 2014
- Publisher :
- Elsevier BV, 2014.
-
Abstract
- We have investigated dislocation behavior in the surface area of surface-oxygen-concentration controlled Si wafers treated by a high temperature rapid thermal oxidation (HT-RTO). The HT-RTO process allows us to precisely control the interstitial oxygen concentration ([O i ]) in the surface area of the Si wafers. Sizes of rosette patterns, generated by nano-indentation and subsequent thermal annealing at 900 °C for 1 h, were measured for the Si wafers with various [O i ]. It was found that the rosette size decreases in proportion to the − 0.25 power of [O i ] in the surface area of the Si wafers, which were higher than [O i ] of 1 × 10 17 atoms/cm 3 . On the other hand, [O i ] of lower than 1 × 10 17 atoms/cm 3 did not affect the rosette size very much. These experimental results demonstrate the ability of the HT-RTO process to suppress the dislocation movements in the surface area of the Si wafer.
- Subjects :
- Thermal oxidation
Surface oxygen
Materials science
Metals and Alloys
Analytical chemistry
Surfaces and Interfaces
Surfaces, Coatings and Films
Electronic, Optical and Magnetic Materials
Rosette (botany)
Crystallography
Indentation
Materials Chemistry
Wafer
Limiting oxygen concentration
Dislocation
Subjects
Details
- ISSN :
- 00406090
- Volume :
- 557
- Database :
- OpenAIRE
- Journal :
- Thin Solid Films
- Accession number :
- edsair.doi...........6ef4845cda597341b5490af75bd842da
- Full Text :
- https://doi.org/10.1016/j.tsf.2013.10.081