Surface InAs/InP quantum wells: epitaxial growth and characterization

Authors :: T. Benyattou
G. Hollinger
Zbigniew Sobiesierski
Gérard Guillot
Pierre Viktorovitch
A. Tabata
S. A. Clark
R.H. Williams
Michel Gendry
Source :: [Proceedings 1991] Third International Conference Indium Phosphide and Related Materials.
Publication Year :: 2002
Publisher :: IEEE, 2002.
Abstract: The epitaxial growth and characterization of InAs surface quantum wells grown on InP by molecular beam epitaxy (MBE) are discussed. The structural properties of the InAs layers are described. Photoluminescence results are presented. This system shows practically no coupling between the confined states in the InAs quantum well and the InAs surface states. >

Subjects :: Photoluminescence
Materials science
Condensed matter physics
Condensed Matter::Other
business.industry
Condensed Matter::Mesoscopic Systems and Quantum Hall Effect
Epitaxy
Condensed Matter::Materials Science
chemistry.chemical_compound
Semiconductor
chemistry
Indium phosphide
Optoelectronics
business
Quantum well
Surface reconstruction
Molecular beam epitaxy
Surface states

Database :: OpenAIRE
Journal :: [Proceedings 1991] Third International Conference Indium Phosphide and Related Materials
Accession number :: edsair.doi...........6eeea4f705ad3c88467281ef932b3e58
Full Text :: https://doi.org/10.1109/iciprm.1991.147421