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Key challenges and opportunities for 3D sequential integration

Authors :
E. Vecchio
T. Zheng
W. Li
Arindam Mallik
Liesbeth Witters
A. Hikkavyy
Nancy Heylen
Nadine Collaert
Fumihiro Inoue
Dan Mocuta
Z. Wu
Bertrand Parvais
Erik Rosseel
Julien Ryckaert
Niamh Waldron
J. Franco
Nouredine Rassoul
Lieve Teugels
Katia Devriendt
G. Jamieson
Juergen Boemmels
Anne Vandooren
G. Verbinnen
V. De Heyn
Lan Peng
Source :
2018 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S).
Publication Year :
2018
Publisher :
IEEE, 2018.

Abstract

In this paper, we review the current progress on 3D sequential device stacking, highlighting the main integration challenges and the possible technological solutions. Junction-less devices are shown to be attractive top tier devices for low temperature processing, low complexity of fabrication and meeting reliability specification despite without the use of “reliability” anneal. Next, we explore the potential benefits of 3D sequential stacking at transistor level, CMOS level and for hybrid circuits.

Details

Database :
OpenAIRE
Journal :
2018 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S)
Accession number :
edsair.doi...........6ece2fe9cc993dbb1c9693a4f91d037f
Full Text :
https://doi.org/10.1109/s3s.2018.8640203