Threshold voltage control for PMOSFETs using an undoped epitaxial Si channel and a p+-SixGe1−x gate

Authors :: S.-L. Zhang
Per-Erik Hellberg
H.H Radamsson
W Kaplan
Source :: Solid-State Electronics. 44:2085-2088
Publication Year :: 2000
Publisher :: Elsevier BV, 2000.
Abstract: Threshold voltage control for PMOSFETs using an undoped epitaxial Si channel and a p+-SixGe1-x gate

Subjects :: Materials science
Silicon
business.industry
Electrical engineering
chemistry.chemical_element
Germanium
Condensed Matter Physics
Epitaxy
Electronic, Optical and Magnetic Materials
Threshold voltage
CMOS
chemistry
Gate oxide
MOSFET
Materials Chemistry
Optoelectronics
Electrical and Electronic Engineering
business
Communication channel

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