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Improvement of Rectification Characteristics of TaOx/Al2O3 Memristors by Oxygen Anion Migration and Barrier Modulation
- Source :
- IEEE Transactions on Electron Devices. 70:3354-3359
- Publication Year :
- 2023
- Publisher :
- Institute of Electrical and Electronics Engineers (IEEE), 2023.
- Subjects :
- Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials
Subjects
Details
- ISSN :
- 15579646 and 00189383
- Volume :
- 70
- Database :
- OpenAIRE
- Journal :
- IEEE Transactions on Electron Devices
- Accession number :
- edsair.doi...........6e4fd9b8ea040b6fd261d83ce953c3e9