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High responsivity a-Si:H bottom-electrode metal-semiconductor-metal photodetector (BMSM-PD)
- Source :
- Electronics Letters. 32:929
- Publication Year :
- 1996
- Publisher :
- Institution of Engineering and Technology (IET), 1996.
-
Abstract
- A novel simple bottom-electrode metal-semiconductor-metal photodetector (BMSM-PD) with an i-a-Si:H barrier layer and a phosphorus-doped n-a-Si:H light-absorbing layer was used to improve the responsivity of MSM-PD. At a bias of 10 V and an He-Ne laser incident power of 10 /spl mu/W, the obtained n-a-Si:H BMSM-PD had a high responsivity of 10 A/W, a low dark current density of 2.35 pA//spl mu/m/sup 2/, and a spectral response peaked at 605 nm.
Details
- ISSN :
- 00135194
- Volume :
- 32
- Database :
- OpenAIRE
- Journal :
- Electronics Letters
- Accession number :
- edsair.doi...........6d6001210ab6964adc2cfbbe526f5cae
- Full Text :
- https://doi.org/10.1049/el:19960610