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High responsivity a-Si:H bottom-electrode metal-semiconductor-metal photodetector (BMSM-PD)

Authors :
Li-Hong Laih
Yen-Ann Chen
Jyh-Wong Hong
Wen-Chin Tsay
Source :
Electronics Letters. 32:929
Publication Year :
1996
Publisher :
Institution of Engineering and Technology (IET), 1996.

Abstract

A novel simple bottom-electrode metal-semiconductor-metal photodetector (BMSM-PD) with an i-a-Si:H barrier layer and a phosphorus-doped n-a-Si:H light-absorbing layer was used to improve the responsivity of MSM-PD. At a bias of 10 V and an He-Ne laser incident power of 10 /spl mu/W, the obtained n-a-Si:H BMSM-PD had a high responsivity of 10 A/W, a low dark current density of 2.35 pA//spl mu/m/sup 2/, and a spectral response peaked at 605 nm.

Details

ISSN :
00135194
Volume :
32
Database :
OpenAIRE
Journal :
Electronics Letters
Accession number :
edsair.doi...........6d6001210ab6964adc2cfbbe526f5cae
Full Text :
https://doi.org/10.1049/el:19960610