High responsivity a-Si:H bottom-electrode metal-semiconductor-metal photodetector (BMSM-PD)

A novel simple bottom-electrode metal-semiconductor-metal photodetector (BMSM-PD) with an i-a-Si:H barrier layer and a phosphorus-doped n-a-Si:H light-absorbing layer was used to improve the responsivity of MSM-PD. At a bias of 10 V and an He-Ne laser incident power of 10 /spl mu/W, the obtained n-a-Si:H BMSM-PD had a high responsivity of 10 A/W, a low dark current density of 2.35 pA//spl mu/m/sup 2/, and a spectral response peaked at 605 nm.