Emission wavelength control of InAs/GaAs quantum dots using an As2 source for near-infrared broadband light source applications

Herein, we report an emission wavelength control technique for self-assembled InAs quantum dots (QDs) grown via molecular beam epitaxy using an As2 source (As2-QDs). The As2-QDs exhibited photoluminescence with a shorter center wavelength and larger bandwidth than those of the QDs grown using an As4 source. In addition, the emission center wavelength could be controlled by adjusting the time between the growth and capping of the As2-QDs. We utilized the multilayer stack of emission-wavelength-controlled As2-QDs to fabricate an electrically-driven light source and demonstrated its broadband (approximately 130 nm) emission in the 1–1.3 μm wavelength range.