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Fast-Gated Imaging of Pinch and Post Pinch Phase Dynamics for Understanding Material Synthesis and Processing in Plasma Focus Device

Authors :
Rajdeep Singh Rawat
Paul Lee
Joseph Vimal Vas
Mayank Mishra
Source :
2018 IEEE International Conference on Plasma Science (ICOPS).
Publication Year :
2018
Publisher :
IEEE, 2018.

Abstract

Plasma Focus devices are receiving attention in the field of plasma nanotechnology, particularly for the synthesis of nanostructured carbon and carbon thin films, since they are a good source of high energy ionic species. For attaining greater control over the deposition and processing of materials, the appropriate ion energies and ion flux and the control over plasma dynamics need to be achieved to make this process reliable and repeatable. One of the main parameter to achieve this control is the electrode dimensions, operating gas pressure, and gas mixture ratio in plasma focus device. We kept the operating voltages same. For example, to limit the amount of material deposited, it might be necessary to dilute the reactive gaseous environment with inert gases like He, N e or Ar. The dilution/mixture can affect the pinch dynamics inside the plasma focus device. In the present study, we report the use of different diagnostics, such as electrical probes and fast-gated imaging, to understand the pinch and post pinch plasma dynamics under methane gas operation mixed with neon and argon gases. In order to increase the pinch plasma volume for more material synthesis the experiments were also performed with modified plasma focus device with larger diameter anode. Elongated and larger volume pinch plasma column together with multiple pinches during later half-cycles of current discharge were obtained. These results will be discussed in detail during the conference.

Details

Database :
OpenAIRE
Journal :
2018 IEEE International Conference on Plasma Science (ICOPS)
Accession number :
edsair.doi...........6cf9972fd694b410b8b5d6e20e6ebab6
Full Text :
https://doi.org/10.1109/icops35962.2018.9575500