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Ns laser annealing for junction activation preserving inter-tier interconnections stability within a 3D sequential integration
- Source :
- 2016 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S).
- Publication Year :
- 2016
- Publisher :
- IEEE, 2016.
-
Abstract
- In this paper, the energy process window of nanosecond (ns) laser annealing for junctions activation has been determined for several dopants (As, P, BF2). The different recrystallization states observed when tuning laser energy density are explained by numerical simulations. Within these conditions, the laser impact on the thermal stability of ULK/copper inter-tiers interconnections has been evaluated for a 28nm node backend metal 1 design rules technology both from morphological and electrical perspectives. This study highlights the interest of ns laser anneal for CoolCubeâ„¢ 3D integration.
- Subjects :
- 010302 applied physics
Materials science
Dopant
Silicon
Annealing (metallurgy)
business.industry
Recrystallization (metallurgy)
chemistry.chemical_element
02 engineering and technology
Nanosecond
021001 nanoscience & nanotechnology
Laser
01 natural sciences
Semiconductor laser theory
law.invention
chemistry
law
0103 physical sciences
Electronic engineering
Optoelectronics
Process window
0210 nano-technology
business
Subjects
Details
- Database :
- OpenAIRE
- Journal :
- 2016 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S)
- Accession number :
- edsair.doi...........6cc96488373629f31f430c0bd83507d1