Properties of Dy-doped ZnO nanocrystalline thin films prepared by pulsed laser deposition

Highly transparent conductive Dy 2 O 3 doped zinc oxide (ZnO) 1– x (Dy 2 O 3 ) x nanocrystalline thin films with x from 0.5% to 5% have been deposited on glass substrate by pulsed laser deposition technique. The structural, electrical and optical properties of Dy 2 O 3 doped thin films were investigated as a function of the x value. The experimental results show that the Dy concentration in Dy-doped ZnO thin films has a strong influence on the material properties especially electrical properties. The resistivity decreased to a minimum value of 5.02 × 10 −4 Ω cm with x increasing from 0.5% to 1.0%, then significantly increased with the further increasing of x value. On the contrary, the optical direct band gap of the (ZnO) 1– x (Dy 2 O 3 ) x films first increased, then decreased with x increasing. The average transmission of Dy 2 O 3 doped zinc oxide films in the visible range is above 90%.