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1 meV electron irradiation and post-annealing effects of GaInAsN diluted nitride alloy with 1 eV bandgap energy
- Source :
- Thin Solid Films. 709:138237
- Publication Year :
- 2020
- Publisher :
- Elsevier BV, 2020.
-
Abstract
- 1 meV electron irradiation and post thermal annealing effects of GaInAsN bulk material with bandgap energy of 1 eV was studied by low-temperature photoluminescence (PL). The nitrogen proportion of the samples was confirmed by high-resolution X-ray diffraction measurement as 0.26%. The result shows that the PL intensity and high activation energy non-radiative centers of GaInAsN materials degraded seriously due to the irradiation induced large number of defects. The PL enhancement phenomena were observed in all samples after rapid thermal annealing (RTA) at 650 ∘C for five minutes. The irradiation and RTA caused PL peak red-shift and blue-shift have been discussed.
- Subjects :
- 010302 applied physics
Diffraction
Materials science
Photoluminescence
Band gap
Alloy
Metals and Alloys
Analytical chemistry
chemistry.chemical_element
02 engineering and technology
Surfaces and Interfaces
Nitride
engineering.material
021001 nanoscience & nanotechnology
01 natural sciences
Nitrogen
Surfaces, Coatings and Films
Electronic, Optical and Magnetic Materials
chemistry
0103 physical sciences
Materials Chemistry
Electron beam processing
engineering
Irradiation
0210 nano-technology
Subjects
Details
- ISSN :
- 00406090
- Volume :
- 709
- Database :
- OpenAIRE
- Journal :
- Thin Solid Films
- Accession number :
- edsair.doi...........6cb159869cd9c79a455e5d4e3d665d03