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Characteristic temperature of a tunneling-injection quantum dot laser: Effect of out-tunneling from quantum dots
- Source :
- Solid-State Electronics. 52:1674-1679
- Publication Year :
- 2008
- Publisher :
- Elsevier BV, 2008.
-
Abstract
- A laser structure is studied, which exploits tunneling-injection of electrons and holes into quantum dots (QDs) from two separate quantum wells (QWs). An extended theoretical model is developed allowing for out-tunneling leakage of carriers from QDs into the opposite-to-injection-side QWs (electrons into the p-side QW and holes into the n-side QW). Due to out-tunneling leakage, parasitic recombination of electron-hole pairs occurs outside QDs – in the QWs and optical confinement layer. The threshold current density j th and the characteristic temperature T 0 are shown to be mainly controlled by the recombination in the QWs. Even in the presence of out-tunneling from QDs and recombination outside QDs, a tunneling-injection laser shows potential for significant improvement of temperature stability of j th – the characteristic temperature T 0 remains very high (above 300 K at room temperature) and not significantly affected by the QD size fluctuations.
- Subjects :
- Condensed matter physics
Condensed Matter::Other
Chemistry
Electron
Condensed Matter::Mesoscopic Systems and Quantum Hall Effect
Condensed Matter Physics
Laser
Electronic, Optical and Magnetic Materials
law.invention
Quantum dot
Quantum dot laser
law
Materials Chemistry
Electrical and Electronic Engineering
Recombination
Quantum tunnelling
Quantum well
Leakage (electronics)
Subjects
Details
- ISSN :
- 00381101
- Volume :
- 52
- Database :
- OpenAIRE
- Journal :
- Solid-State Electronics
- Accession number :
- edsair.doi...........6caf0232c601430e161a77a46642eab9