Photoluminescent, magnetic, and semiconductive properties of a terbium material

A terbium material is prepared under hydrothermal conditions and structurally characterized by X-ray diffraction technique. This compound is characterized by an isolated structure. Solid-state photoluminescence measurement discovers that it shows a strong emission in the green region. The sharp bands at 490, 544, 585, and 620 nm correspond to the characteristic emission 5D4–7FJ transitions (J = 6, 5, 4, and 3, respectively) of the Tb3+ ions. Solid-state diffuse reflectance spectrum reveals that the existence of a wide optical bandgap of 4.83 eV, indicating that it is potentially a wide band-gap semiconductor. Magnetic properties of the compound are investigated. The magnetic susceptibility obeys the Curie–Weiss law (χm = c/( T− θ)) with c = 10.55(8) K and a negative Weiss constant θ = − 1.11(7) K; this suggests the presence of an antiferromagnetic interaction in this compound. A terbium compound has been prepared and it features an isolated structure. Solid-state photoluminescence measurement reveals that it shows a strong emission in the green region. Solid-state diffuse reflectance spectrum reveals an optical bandgap of 4.83 eV. Magnetic properties discover that it features antiferromagnetic interaction.