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A 0.13 $\mu{\hbox {m}}$ SiGe BiCMOS Technology Featuring f$_{T} $/f$_{\max}$ of 240/330 GHz and Gate Delays Below 3 ps
- Source :
- IEEE Journal of Solid-State Circuits. 45:1678-1686
- Publication Year :
- 2010
- Publisher :
- Institute of Electrical and Electronics Engineers (IEEE), 2010.
-
Abstract
- A 0.13 μm SiGe BiCMOS technology for millimeter-wave applications is presented. This technology features high-speed HBTs with peak transit frequencies fT of 240 GHz, maximum oscillation frequencies fmax of 330 GHz, and breakdown voltages BVCEO of 1.7 V along with high-voltage HBTs (fT = 50 GHz,fmax = 130 GHz, BVCEO = 3.7 V) integrated in a dual gate oxide RF-CMOS process. Ring oscillator gate delays of 2.9 ps, low-noise amplifiers for 122 GHz, and LC oscillators with fundamental-mode oscillation frequencies above 200 GHz are demonstrated.
Details
- ISSN :
- 1558173X and 00189200
- Volume :
- 45
- Database :
- OpenAIRE
- Journal :
- IEEE Journal of Solid-State Circuits
- Accession number :
- edsair.doi...........6bd8a4931d12ff4a54aba74b9fdbea53