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Paramagnetic NO2 centers in thin γ-irradiated HfO2 layers on (100)Si revealed by electron spin resonance
- Source :
- Applied Physics Letters. 84:4574-4576
- Publication Year :
- 2004
- Publisher :
- AIP Publishing, 2004.
-
Abstract
- Electron spin resonance (ESR) analysis reveals the incorporation of N in (100)Si/HfO2 structures with ultrathin amorphous HfO2 films deposited by chemical vapor deposition (CVD) using Hf(NO3)4 as precursor, through detection, after 60Co γ-irradiation, of NO2 radicals (density ≳55 at. ppm). The molecules are found to be stabilized and likely homogeneously distributed in the HfO2 network. Some network forming N entity is suggested as a precursor, transformed into ESR-active NO2 upon γ-irradiation. The interesting N incorporation aspect appears inherent to the particular CVD process.
- Subjects :
- inorganic chemicals
Materials science
Physics and Astronomy (miscellaneous)
Radical
chemistry.chemical_element
Chemical vapor deposition
Nitrogen
law.invention
Amorphous solid
Paramagnetism
Crystallography
Nuclear magnetic resonance
chemistry
law
Molecule
Irradiation
Electron paramagnetic resonance
Subjects
Details
- ISSN :
- 10773118 and 00036951
- Volume :
- 84
- Database :
- OpenAIRE
- Journal :
- Applied Physics Letters
- Accession number :
- edsair.doi...........6b8edbd7a3b2acccce73298869e06b8b