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Carrier transport in graphite/Si3N4-nanobelt/PtIr Schottky barrier diodes

Authors :
Bin Tang
Weiyou Yang
Minghui Shang
Guodong Wei
Fengmei Gao
Jinghui Bi
Source :
Applied Physics Letters. 105:191604
Publication Year :
2014
Publisher :
AIP Publishing, 2014.

Abstract

Understanding the roles of contacts and interfaces between metals and semiconductors is critically important for exploring nanostructure-based nanodevices. The present study shed some light on the dominated mechanism of size-dependent carrier transfer in the Schottky barrier diodes configured by the Pt-Ir/Si3N4-nanobelt/graphite (metal-semiconductor-metal (MSM)) sandwiched structure via a conductive atomic force microscopy using nanobelts with various thicknesses. The observed I-V behaviors suggested that the charge transports under the low and high biases were dominated by the reverse-biased Schottky barrier and space-charge-limited current (SCLC), respectively. The intermediate region between the low and high biases presented the transition between the Ohmic and SCLC behaviors, in which the ≡Si and =N dangling bonds acted as the defects within the Si3N4 nanobelt surface are predominant in the charge transfer.

Details

ISSN :
10773118 and 00036951
Volume :
105
Database :
OpenAIRE
Journal :
Applied Physics Letters
Accession number :
edsair.doi...........6b16ca660c7ac5614e4818352fa5a115
Full Text :
https://doi.org/10.1063/1.4901821