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Mechanism of Highly Efficient Electron Emission from a Graphene/Oxide/Semiconductor Structure
- Source :
- ACS Applied Electronic Materials. 2:2265-2273
- Publication Year :
- 2020
- Publisher :
- American Chemical Society (ACS), 2020.
-
Abstract
- Highly efficient electron emission of 48.5% was demonstrated by a graphene/oxide/semiconductor (GOS) structure. The main factors contributing to this performance were investigated by analyzing the ...
- Subjects :
- Materials science
Graphene
business.industry
Oxide
Electron
Electronic, Optical and Magnetic Materials
law.invention
Field electron emission
chemistry.chemical_compound
Oxide semiconductor
Semiconductor
chemistry
law
Materials Chemistry
Electrochemistry
Optoelectronics
Work function
business
Mechanism (sociology)
Subjects
Details
- ISSN :
- 26376113
- Volume :
- 2
- Database :
- OpenAIRE
- Journal :
- ACS Applied Electronic Materials
- Accession number :
- edsair.doi...........6ae6922d668c1a6590c630d0a17b2917