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Dielectric Constant and Loss Tangent of Silicon at 700–900 GHz at Cryogenic Temperatures

Authors :
Sylvain Caroopen
Michele Batrung
Maurice Gheudin
Yan Delorme
Kangmin Zhou
Sheng-Cai Shi
Source :
IEEE Microwave and Wireless Components Letters. 29:501-503
Publication Year :
2019
Publisher :
Institute of Electrical and Electronics Engineers (IEEE), 2019.

Abstract

Quasi-optical superconducting hot-electron bolometer (HEB) mixers have shown a competitive sensitivity at a frequency slightly lower than 1 THz when compared to superconducting SIS mixers. The advantage of low LO power requirement makes superconducting HEB mixers, especially suitable for array application. The far-field beam pattern, as well as coupling efficiency of quasi-optical superconducting HEB mixers, depends strongly upon the lens shape and the dielectric constant of the lens material. Therefore, in this letter we precisely measured the dielectric constant and loss tangent of high resistivity silicon at 4, 77, and 300 K in the frequency range of 700–900 GHz where many important molecular lines located. The measurements are performed by employing a quasi-optical vector network analyzer with a dynamic range as high as 110 dB to ensure high precision measurement. In addition, the dielectric constant of high-density polyethylene (HDPE) and polymethylpentene (TPX/PMP) are also measured since they are widely used in terahertz quasi-optical system.

Details

ISSN :
15581764 and 15311309
Volume :
29
Database :
OpenAIRE
Journal :
IEEE Microwave and Wireless Components Letters
Accession number :
edsair.doi...........6a93c94e3a661e95b57b70d0348b4a58
Full Text :
https://doi.org/10.1109/lmwc.2019.2920532