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Nonferroelectric epitaxial Sr–Bi–Ta oxide thin film with a high dielectric constant
- Source :
- Applied Physics Letters. 73:2518-2520
- Publication Year :
- 1998
- Publisher :
- AIP Publishing, 1998.
-
Abstract
- Two kinds of epitaxial Sr–Bi–Ta oxides were grown on La0.5Sr0.5CoO3(001)/LaAlO3(001) substrates by pulsed laser deposition. At a temperature higher than 650 °C, c-axis oriented SrBi2Ta2O9 films could be deposited epitaxially. At 550 °C, an epitaxial film with a cubic fluorite-like phase could be grown. Although the film with the cubic phase does not show ferroelectric properties, it has good electrical properties which are suitable for high capacitance applications.
Details
- ISSN :
- 10773118 and 00036951
- Volume :
- 73
- Database :
- OpenAIRE
- Journal :
- Applied Physics Letters
- Accession number :
- edsair.doi...........6a6e8ae076cde6c82302f88183c22c1e
- Full Text :
- https://doi.org/10.1063/1.122501