Improved Airy function formalism for study of resonant tunneling in multibarrier semiconductor heterostructures

We show that our exact one‐dimensional Airy function formalism for studying electron resonant tunneling in multibarrier semiconductor heterostructures is an improvement on a previous calculation of Brennan and Summers [J. Appl. Phys. 61, 614 (1987)]. We also clearly demonstrate that our method gives better agreement with the numerical approach of Vassell, Lee, and Lockwood [J. Appl. Phys. 54, 5206 (1983)] in calculating the transmission coefficient T(E) and current density J(E) for multibarrier semiconductor heterostructures.