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Growth of lattice-relaxed InGaN thick films on patterned sapphire substrates by tri-halide vapor phase epitaxy

Authors :
Ryohei Hieda
Hisashi Murakami
Kentaro Ema
Source :
Japanese Journal of Applied Physics. 60:105501
Publication Year :
2021
Publisher :
IOP Publishing, 2021.

Subjects

Subjects :
Lattice (module)
Materials science
Physics and Astronomy (miscellaneous)
Condensed matter physics
Vapor phase
General Engineering
Sapphire
General Physics and Astronomy
Halide
Epitaxy

Details

ISSN :
13474065 and 00214922
Volume :
60
Database :
OpenAIRE
Journal :
Japanese Journal of Applied Physics
Accession number :
edsair.doi...........6a046376b2253927a8396a25fa4732dd
Full Text :
https://doi.org/10.35848/1347-4065/ac1e46
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