Back to Search
Start Over
A 0.35 ¿m SiGe BiCMOS Technology for Power Amplifier Applications
- Source :
- 2007 IEEE Bipolar/BiCMOS Circuits and Technology Meeting.
- Publication Year :
- 2007
- Publisher :
- IEEE, 2007.
-
Abstract
- In this paper we introduce, a state-of-the-art SiGe BiCMOS power amplifier technology that features two NPNs with 40 GHz / 6.0 V & 27 GHz / 8.5 V (fT - BVceo) respectively, a novel low inductance metal ground through-silicon-via (TSV), integrated on a low-cost 0.35 μm lithography node with 3.3 V / 5.0 V dual-gate CMOS technology and high-quality passives on a 50 Ω.cm substrate.
Details
- ISSN :
- 10889299
- Database :
- OpenAIRE
- Journal :
- 2007 IEEE Bipolar/BiCMOS Circuits and Technology Meeting
- Accession number :
- edsair.doi...........69f768941b9f07f9c4bc96f3507b0e97
- Full Text :
- https://doi.org/10.1109/bipol.2007.4351868