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Electron-beam-assisted critical dimension reduction
- Source :
- SPIE Proceedings.
- Publication Year :
- 2003
- Publisher :
- SPIE, 2003.
-
Abstract
- In this communication, we presented a novel approach to reduce critical dimension of resist features. The proposed method involves two process steps: resist pattern formation and critical dimension reduction. This concept was demonstrated to produce sub-100 nm resist features using negative-tone chemically amplified resist, NEB22A2 and Hitachi-900D electron beam lithography system. Experimental results indicate that the degree of critical dimension reduction can be controlled by the dose of flood electron-beam exposure and second wet developer strength. The theoretical results, based on Monte Carlo simulations, were found to be in qualitatively agreement with our experimental observations.
Details
- ISSN :
- 0277786X
- Database :
- OpenAIRE
- Journal :
- SPIE Proceedings
- Accession number :
- edsair.doi...........69d2e420e62ca432f5526fb118fd2eac