Back to Search
Start Over
Speed and power performance comparison of state-of-the-art CMOS and SiGe RF transistors
- Source :
- Digest of Papers. 2004 Topical Meeting onSilicon Monolithic Integrated Circuits in RF Systems, 2004..
- Publication Year :
- 2005
- Publisher :
- IEEE, 2005.
-
Abstract
- DC and RF characteristics of Si nFETs and SiGe HBTs are compared in IBM's leading-edge production RFCMOS and BiCMOS technologies at 90 and 130 nm nodes respectively. Underlying performance trade-offs to achieve low power circuit operation are investigated.
- Subjects :
- Materials science
business.industry
Heterojunction bipolar transistor
Transistor
Electrical engineering
Power performance
Hardware_PERFORMANCEANDRELIABILITY
BiCMOS
law.invention
Power (physics)
CMOS
law
Hardware_INTEGRATEDCIRCUITS
Optoelectronics
Field-effect transistor
State (computer science)
business
Subjects
Details
- Database :
- OpenAIRE
- Journal :
- Digest of Papers. 2004 Topical Meeting onSilicon Monolithic Integrated Circuits in RF Systems, 2004.
- Accession number :
- edsair.doi...........69b5a391a769b792e593dc9dad0b8d80
- Full Text :
- https://doi.org/10.1109/smic.2004.1398181