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Optical properties of ZnO thin films prepared by sol–gel process

Authors :
Abdelilah Slaoui
Olivier Crégut
B. Hönerlage
Cédric Leuvrey
Julien Petersen
Silviu Colis
Pierre Gilliot
Corinne Ulhaq-Bouillet
Guy Schmerber
Mathieu Gallart
Aziz Dinia
Jean-Luc Rehspringer
Christelle Brimont
Source :
Microelectronics Journal. 40:239-241
Publication Year :
2009
Publisher :
Elsevier BV, 2009.

Abstract

The present study focused on ZnO thin films fabricated by sol-gel process and spin coated onto Si (100) and quartz substrates. ZnO thin films have a hexagonal wurtzite structure with a grain diameter about 50nm. Optical properties were determined by photoluminescence (PL) and absorption spectroscopy. The absorption spectrum is dominated by a sharp excitonic peak at room and low temperatures. At room temperature, two transitions were observed by PL. One near to the prohibited energy band in ultraviolet (UV) region and the other centered at 640nm, characteristic of the electronic defects in the band-gap. The spectrum at 6K is dominated by donor-bound exciton lines and donor-acceptor pair transition. LO-phonon replica and two-electron satellite transitions are also observed. These optical characteristics are a signature of high-quality thin films.

Details

ISSN :
00262692
Volume :
40
Database :
OpenAIRE
Journal :
Microelectronics Journal
Accession number :
edsair.doi...........699f12331f38b259a590e17ecd8eaeab