Cite
Charge offset stability in tunable-barrier Si single-electron tunneling devices
MLA
Neil M. Zimmerman, et al. “Charge Offset Stability in Tunable-Barrier Si Single-Electron Tunneling Devices.” Applied Physics Letters, vol. 90, Jan. 2007, p. 033507. EBSCOhost, https://doi.org/10.1063/1.2431778.
APA
Neil M. Zimmerman, Yasuo Takahashi, Hiroshi Inokawa, Akira Fujiwara, Yukinori Ono, & Brian J. Simonds. (2007). Charge offset stability in tunable-barrier Si single-electron tunneling devices. Applied Physics Letters, 90, 033507. https://doi.org/10.1063/1.2431778
Chicago
Neil M. Zimmerman, Yasuo Takahashi, Hiroshi Inokawa, Akira Fujiwara, Yukinori Ono, and Brian J. Simonds. 2007. “Charge Offset Stability in Tunable-Barrier Si Single-Electron Tunneling Devices.” Applied Physics Letters 90 (January): 033507. doi:10.1063/1.2431778.