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Charge offset stability in tunable-barrier Si single-electron tunneling devices
- Source :
- Applied Physics Letters. 90:033507
- Publication Year :
- 2007
- Publisher :
- AIP Publishing, 2007.
-
Abstract
- The problem of charge offset drift in single-electron tunneling (SET) devices can preclude their useful application in metrology and integrated devices. We demonstrate that in tunable-barrier Si-based SET transistors there is excellent stability, with a drift that is in general less than 0.01e; these devices exhibit some unwanted sensitivity to external perturbations including temperature excursions. Finally, we show that these devices can be “trained” to minimize their sensitivity to abrupt voltage changes.
- Subjects :
- Materials science
Offset (computer science)
Physics and Astronomy (miscellaneous)
Silicon
business.industry
Transistor
Analytical chemistry
chemistry.chemical_element
law.invention
Metrology
Integrated devices
Single electron tunneling
chemistry
law
Optoelectronics
business
Quantum tunnelling
Voltage
Subjects
Details
- ISSN :
- 10773118 and 00036951
- Volume :
- 90
- Database :
- OpenAIRE
- Journal :
- Applied Physics Letters
- Accession number :
- edsair.doi...........6999208f122c8ebc74d65926c2e1c880
- Full Text :
- https://doi.org/10.1063/1.2431778