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Charge offset stability in tunable-barrier Si single-electron tunneling devices

Authors :
Neil M. Zimmerman
Yasuo Takahashi
Hiroshi Inokawa
Akira Fujiwara
Yukinori Ono
Brian J. Simonds
Source :
Applied Physics Letters. 90:033507
Publication Year :
2007
Publisher :
AIP Publishing, 2007.

Abstract

The problem of charge offset drift in single-electron tunneling (SET) devices can preclude their useful application in metrology and integrated devices. We demonstrate that in tunable-barrier Si-based SET transistors there is excellent stability, with a drift that is in general less than 0.01e; these devices exhibit some unwanted sensitivity to external perturbations including temperature excursions. Finally, we show that these devices can be “trained” to minimize their sensitivity to abrupt voltage changes.

Details

ISSN :
10773118 and 00036951
Volume :
90
Database :
OpenAIRE
Journal :
Applied Physics Letters
Accession number :
edsair.doi...........6999208f122c8ebc74d65926c2e1c880
Full Text :
https://doi.org/10.1063/1.2431778