Advanced strategy for in-line process monitoring using FIB and TEM

In semiconductor industries the detection of process deviations (especially in the first phase of the manufacturing) has become mandatory before the final electrical testing. The aim of this work is to demonstrate that it is possible to use a Dual Beam (BD) system to provide detailed feedback at critical process steps without scrapping wafer also when the information is in the buried layers. The possible influence of the FIB cut process on yield variation was evaluated and three cases of monitoring are shown. In particular examples of classical cross-section to find some buried target, of 3D FIB reconstruction and of in-line monitor using TEM across a sample preparation by means of FIB chunk methods are discussed.