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Surface Diffusion of Gallium as the Origin of Inhomogeneity in Selective Area Growth of GaN Nanowires on AlxOy Nucleation Stripes
- Source :
- Crystal Growth & Design. 20:4770-4778
- Publication Year :
- 2020
- Publisher :
- American Chemical Society (ACS), 2020.
-
Abstract
- Selective area epitaxial growth of III–V and III–N nanostructures and nanowires was proven efficient for synthesis of scalable and highly ordered electronic and optoelectronic nanomaterials on diss...
- Subjects :
- Surface diffusion
Nanostructure
Materials science
010405 organic chemistry
Nanowire
Nucleation
chemistry.chemical_element
Nanotechnology
General Chemistry
010402 general chemistry
Condensed Matter Physics
Epitaxy
01 natural sciences
0104 chemical sciences
Nanomaterials
chemistry
General Materials Science
Gallium
Subjects
Details
- ISSN :
- 15287505 and 15287483
- Volume :
- 20
- Database :
- OpenAIRE
- Journal :
- Crystal Growth & Design
- Accession number :
- edsair.doi...........68d0e87c2d76aff38864aa04b303544d