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Theoretical and experimental investigation of optical absorption anisotropy in $��$-Ga2O3
- Publication Year :
- 2015
- Publisher :
- arXiv, 2015.
-
Abstract
- The question of optical bandgap anisotropy in the monoclinic semiconductor $��$-Ga2O3 was revisited by combining accurate optical absorption measurements with theoretical analysis, performed using different advanced computation methods. As expected, the bandgap edge of bulk $��$-Ga2O3 was found to be a function of light polarization and crystal orientation, with the lowest onset occurring at polarization in the ac crystal plane around 4.5-4.6 eV; polarization along b unambiguously shifts the onset up by 0.2 eV. The theoretical analysis clearly indicates that the shift of the b onset is due to a suppression of the transition matrix elements of the three top valence bands at $��$ point.<br />11 pages, 5 figures
- Subjects :
- Materials Science (cond-mat.mtrl-sci)
FOS: Physical sciences
Subjects
Details
- Database :
- OpenAIRE
- Accession number :
- edsair.doi...........685aea2cd2a98658f8267c2aabef15a5
- Full Text :
- https://doi.org/10.48550/arxiv.1511.02601