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Low-resistance submicrometre gates used for self alignment

Authors :
H. Beneking
K. Ismail
Source :
Electronics Letters. 20:942
Publication Year :
1984
Publisher :
Institution of Engineering and Technology (IET), 1984.

Abstract

A novel gate fabrication technique useful for MESFETs is presented. The gates have submicrometre dimensions with an extremely low ohmic resistance and are used for self alignment. Simple optical projection lithography and electroplating techniques are needed. The resulting gates have proved to be mechanically strong.

Subjects

Subjects :
Fabrication
Materials science
business.industry
Nanotechnology
Hardware_PERFORMANCEANDRELIABILITY
law.invention
Ohmic Resistance
law
Self alignment
Hardware_INTEGRATEDCIRCUITS
Optoelectronics
Field-effect transistor
Electrical and Electronic Engineering
Photolithography
Electroplating
Projection (set theory)
business
Lithography
Hardware_LOGICDESIGN

Details

ISSN :
00135194
Volume :
20
Database :
OpenAIRE
Journal :
Electronics Letters
Accession number :
edsair.doi...........67f7f1b17bb5f2f2cedd8905d5c2a9d5
Full Text :
https://doi.org/10.1049/el:19840640
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