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Anti-site defect effect on the electronic structure of a Bi2Te3 topological insulator
- Source :
- RSC Advances. 8:423-428
- Publication Year :
- 2018
- Publisher :
- Royal Society of Chemistry (RSC), 2018.
-
Abstract
- Tuning the Fermi level (EF) in Bi2Te3 topological-insulator (TI) films is demonstrated on controlling the temperature of growth with molecular-beam epitaxy (MBE). Angle-resolved photoemission spectra (ARPES) reveal that EF of Bi2Te3 thin films shifts systematically with the growth temperature (Tg). The key role that a Bi-on-Te(1) (BiTe1) antisite defect plays in the electronic structure is identified through extended X-ray-absorption fine-structure (EXAFS) spectra at the Bi L3-edge. Calculations of electronic structure support the results of fitting the EXAFS, indicating that the variation of EF is due to the formation and suppression of BiTe1 that is tunable with the growth temperature. Our findings provide not only insight into the correlation between the defect structure and electronic properties but also a simple route to control the intrinsic topological surface states, which could be useful for applications in TI-based advanced electronic and spintronic devices.
- Subjects :
- Materials science
Spintronics
Condensed matter physics
Extended X-ray absorption fine structure
General Chemical Engineering
Fermi level
Angle-resolved photoemission spectroscopy
02 engineering and technology
General Chemistry
Electronic structure
021001 nanoscience & nanotechnology
01 natural sciences
symbols.namesake
Topological insulator
0103 physical sciences
symbols
Thin film
010306 general physics
0210 nano-technology
Surface states
Subjects
Details
- ISSN :
- 20462069
- Volume :
- 8
- Database :
- OpenAIRE
- Journal :
- RSC Advances
- Accession number :
- edsair.doi...........67f3b4857744ce94bd7d9d59662b9f08