Back to Search
Start Over
Preparation of Ta-N and Ti-N Thin Films as a Capping Layer of CoFeB/MgO Magnetic Tunnel Junctions
- Source :
- Journal of the Japan Institute of Metals and Materials. 77:398-401
- Publication Year :
- 2013
- Publisher :
- Japan Institute of Metals, 2013.
- Subjects :
- Materials science
Metallurgy
Metals and Alloys
Tantalum
chemistry.chemical_element
Nitride
Condensed Matter Physics
Titanium nitride
chemistry.chemical_compound
Tunnel magnetoresistance
chemistry
Tantalum nitride
Mechanics of Materials
Materials Chemistry
Composite material
Thin film
Layer (electronics)
Subjects
Details
- ISSN :
- 18806880 and 00214876
- Volume :
- 77
- Database :
- OpenAIRE
- Journal :
- Journal of the Japan Institute of Metals and Materials
- Accession number :
- edsair.doi...........6762adbac1c0f1939a683dd5ab81fcbd
- Full Text :
- https://doi.org/10.2320/jinstmet.jaw201307