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Pathways of carrier recombination in Si/SiO2 nanocrystal superlattices
- Source :
- Journal of Applied Physics. 126:163101
- Publication Year :
- 2019
- Publisher :
- AIP Publishing, 2019.
-
Abstract
- We investigated picosecond carrier recombination in Si/SiO2 nanocrystal superlattices by ultrafast transient transmission, time-resolved photoluminescence, and Raman spectroscopy. The recombination is of multicarrier origin and it depends strongly on the nanoscale structure of the samples (e.g., crystallinity, percolation, and size distribution). Several recombination pathways were found, including Auger recombination, trapped-carrier Auger recombination, exciton–exciton recombination, and subsequent trapping in band tail states of amorphous silicon phase. The sample microscopic structure is determined using a single parameter, the stoichiometric parameter x, during the plasma-enhanced chemical-vapor deposition process. The percolated samples are hot candidates for all-silicon tandem photovoltaic solar cells in the future.
- Subjects :
- 010302 applied physics
Amorphous silicon
Photoluminescence
Materials science
Auger effect
Superlattice
technology, industry, and agriculture
General Physics and Astronomy
02 engineering and technology
021001 nanoscience & nanotechnology
01 natural sciences
Condensed Matter::Materials Science
chemistry.chemical_compound
symbols.namesake
Nanocrystal
chemistry
Chemical physics
Picosecond
0103 physical sciences
symbols
0210 nano-technology
Raman spectroscopy
Recombination
Subjects
Details
- ISSN :
- 10897550 and 00218979
- Volume :
- 126
- Database :
- OpenAIRE
- Journal :
- Journal of Applied Physics
- Accession number :
- edsair.doi...........67355df9e119799ede117ea0f3144665