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High Sensitivity of Dual Gate ISFETs Using HfO2 and HfO2/Y2O3 Gate Dielectrics

Authors :
Siddhartha Panda
Deepa Bhatt
Source :
ACS Applied Electronic Materials. 3:2818-2824
Publication Year :
2021
Publisher :
American Chemical Society (ACS), 2021.

Subjects

Subjects :
Materials science
business.industry
Materials Chemistry
Electrochemistry
Optoelectronics
Sensitivity (control systems)
Dielectric
Dual gate
business
Electronic, Optical and Magnetic Materials

Details

ISSN :
26376113
Volume :
3
Database :
OpenAIRE
Journal :
ACS Applied Electronic Materials
Accession number :
edsair.doi...........67142d6ffd9acde765f878b52af0242f

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