Effects of Mg dopant in Al-composition-graded Al x Ga1−x N (0.45 ≤ x) on vertical electrical conductivity of ultrawide bandgap AlGaN p–n junction

Subjects

Subjects :

Materials science
Dopant
Electrical resistivity and conductivity
Band gap
General Engineering
medicine
Analytical chemistry
General Physics and Astronomy
Composition (combinatorics)
medicine.disease_cause
p–n junction
Ultraviolet

Details

ISSN :

18820786 and 18820778

Volume :

14

Database :

OpenAIRE

Journal :

Applied Physics Express

Accession number :

edsair.doi...........66f4587d6128b0db7878c8b1bb7b1994

Full Text :

https://doi.org/10.35848/1882-0786/ac1d64