SF6/02 and CF4/02 Reactive-Ion-Etching-Induced Defects in Silicon Studied by Photoluminescence Spectroscopy: Role of Oxygen

Authors :: J. Lennart Lindström
Anne Henry
Moissei K. Sheinkman
Bo Monemar
Irina Buyanova
Gottlieb S. Oehrlein
Source :: Materials Science Forum. :1807-1812
Publication Year :: 1995
Publisher :: Trans Tech Publications, Ltd., 1995.

Subjects :: Photoluminescence
Materials science
Plasma etching
Silicon
Mechanical Engineering
chemistry.chemical_element
Condensed Matter Physics
Oxygen
chemistry
Chemical engineering
Mechanics of Materials
General Materials Science
Reactive-ion etching
Spectroscopy

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