SiGe Nanodots in Electro-Optical SOI Devices

The electronic and optical phenomena, as well as possible device-oriented application in Ge/Si and Ge/SiO2 nanodots that have been synthesized by molecular-beam growth are the scope of this article. We focus on the fundamental aspects and device applications of the small size dots whose electronic states resemble those of an atom even at room temperature. A new branch of semiconductor physics that studies the behavior of electrons confined in precisely tailored potential emerged during the last 20 years. This field has developed from the progress in technology that now allows for the routine fabrication of nanometer-scale solid state structures that contain small numbers of conduction electrons (