Projected performance of experimental InAs/GaAsSb/GaSb TFET as millimeter-wave detector

Based on measurements of a vertical nanowire InAs/GaAsSb/GaSb tunneling field-effect transistor (TFET) that exhibited minimum subthreshold swing of 48 mV/dec and a record high I 60 of 0.31 μA/μm, a SPICE model has been generated to allow an experimentally-based prediction of the nanowire TFET technology. At 30 GHz the detector has been simulated to reveal a sensitivity of 4.8 kV/W biased near zero volts (V GS = −0.06 V, V DS = 0.1 V). A maximum sensitivity of over 4000 kV/W has been obtained under biased conditions. These results exceed prior measurements of an In 0 . 53 Ga 0 . 47 As/ GaAs 0 . 5 Sb 0 . 5 heterojunction TFET by over an order of magnitude.