Depth Gradient Reduced Graphene Oxide Layer via Intense Pulsed Light Annealing Process for the Flexible Resistive Random Access Memory Device

Subjects

Subjects :

Electronic, Optical and Magnetic Materials

Details

ISSN :

2199160X

Volume :

8

Database :

OpenAIRE

Journal :

Advanced Electronic Materials

Accession number :

edsair.doi...........65b5924e429e0fcbaab0ec9e39189b79

Full Text :

https://doi.org/10.1002/aelm.202101018