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Low extended defect density nonpolar m-plane GaN by sidewall lateral epitaxial overgrowth

Authors :
James S. Speck
Kwang-Choong Kim
Shuji Nakamura
Melvin McLaurin
Steven P. DenBaars
Asako Hirai
Feng Wu
Mathew C. Schmidt
Source :
Applied Physics Letters. 93:142108
Publication Year :
2008
Publisher :
AIP Publishing, 2008.

Abstract

Sidewall lateral epitaxial overgrowth (SLEO) is demonstrated by metal organic chemical vapor deposition for nonpolar {11¯00} m-plane GaN films. m-plane GaN films were grown by metal organic chemical vapor deposition on m-plane 6H SiC substrates with an AlN initiation layer. Subsequently, an SiO2 stripe dielectric pattern was formed with 2μm window openings parallel to the [112¯0] a-direction and an 8μm mask and then the m-plane GaN was etched through the window openings to reveal Ga-face (0001) and N-face (0001¯) sidewalls. The SLEO growth was achieved in two growth steps—lateral growth from the sidewalls and subsequent growth through and then over the dielectric mask openings. In comparison to planar m-plane GaN films grown on 6H SiC, the threading dislocation density was reduced from low 1010to3×108cm−2 and the stacking fault density was reduced by one order of magnitude.

Details

ISSN :
10773118 and 00036951
Volume :
93
Database :
OpenAIRE
Journal :
Applied Physics Letters
Accession number :
edsair.doi...........659878ced950bca9ca3c2f0ebbf9004d
Full Text :
https://doi.org/10.1063/1.2908978