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Depth-resolved ultra-violet spectroscopic photo current-voltage measurements for the analysis of AlGaN/GaN high electron mobility transistor epilayer deposited on Si

Authors :
Fei Tong
Burcu Ozden
Min P. Khanal
Minseo Park
Mobbassar Hassan Sk
Chungman Yang
Vahid Mirkhani
Ayayi C. Ahyi
Source :
Applied Physics Letters. 105:172105
Publication Year :
2014
Publisher :
AIP Publishing, 2014.

Abstract

We have demonstrated that the depth-dependent defect distribution of the deep level traps in the AlGaN/GaN high electron mobility transistor (HEMT) epi-structures can be analyzed by using the depth-resolved ultra-violet (UV) spectroscopic photo current-voltage (IV) (DR-UV-SPIV). It is of great importance to analyze deep level defects in the AlGaN/GaN HEMT structure, since it is recognized that deep level defects are the main source for causing current collapse phenomena leading to reduced device reliability. The AlGaN/GaN HEMT epi-layers were grown on a 6 in. Si wafer by metal-organic chemical vapor deposition. The DR-UV-SPIV measurement was performed using a monochromatized UV light illumination from a Xe lamp. The key strength of the DR-UV-SPIV is its ability to provide information on the depth-dependent electrically active defect distribution along the epi-layer growth direction. The DR-UV-SPIV data showed variations in the depth-dependent defect distribution across the wafer. As a result, rapid feedback on the depth-dependent electrical homogeneity of the electrically active defect distribution in the AlGaN/GaN HEMT epi-structure grown on a Si wafer with minimal sample preparation can be elucidated from the DR-UV-SPIV in combination with our previously demonstrated spectroscopic photo-IV measurement with the sub-bandgap excitation.

Details

ISSN :
10773118 and 00036951
Volume :
105
Database :
OpenAIRE
Journal :
Applied Physics Letters
Accession number :
edsair.doi...........6565c99af299d2132f1ec0192efcebad
Full Text :
https://doi.org/10.1063/1.4900869